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Datasheet
* High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones * Integrated bypass switch for LNA * G aAs PHEMT Process * Leadless 3.5 x 3.5 m m . SMT package * LO Input power range: -7.0 to 0 dBm * O perating voltage range: 2.7 to 4 V * Total current consum ption: 22 m A * Adjustable Mixer G ain and IP3 ESD: Electrostatic discharge sensitive device O bserve handling Precautions!
LNA
CMH192
IF Out
LO
Type
Marking
Ordering code (tape and reel)
Package
CMH192
H192
Q62705-K608
VQFN-20
Maximum Ratings Supply Voltage DC-Voltage at RF Ports DC-Voltage at GND Ports DC-Voltage at CNTL Ports Power into LO Input Power into RF-IF Ports Operating Temperature Channel Temperature Storage Temperature Thermal Resistance Channel to Soldering Point (GND)
Symbol min VDD VRF VGND VCNTL Pin,LO Pin, RF Ta TCh Tstg -55 -40 0 - 0.3 - 0.3 0
Value max 6 0.3 0.3 0.3 + VDD 10 10 85 150 150
Unit V V V V dBm dBm C C C
RthChS
102
C /W
CMH192 - Datasheet (October 1st, 2002)
pg. 1/11
Electrical Characteristics
Parameter RF - Frequency / US LO - Frequency / US
(1)
GaAs MMIC
min 1930 1780 1840 typ -
CMH192
max 1990 1940 1870 1820 250 0.0 4.0 VDD 0.2 Unit MHz MHz MHz MHz MHz dBm V V V
RF - Frequency / Korean LO - Frequency / Korean IF Frequency range LO Power Input Supply Voltage (Vdd) High Logic Level (H) Low Logic Level (L) 1) High-side LO is also supported
(1)
1590 50 -7.0 2.7 VDD - 0.2 0.0
LNA - Performance of LNA
Test conditions: Ta = 25C, VDD= 2.7 V, PRF= -22 dBm, fRF = 1960 MHz, LOW=GND, HIGH=Vdd Mode - High Gain, High Linearity Operating Current Noise Figure Gain Input / Output return loss 3rd Order Input Intercept Point Mode - High Gain, Reduced Current Operating Current Noise Figure Gain Input / Output return loss 3rd Order Input Intercept Point Mode - Low Gain, By-Pass Mode Operating Current Noise Figure Gain Input / Output return loss 3rd Order Input Intercept Point min min min typ 7 1.1 12.5 10 8.5 Typ 5 1.2 12.3 10 7.5 Typ 0 4.5 5 10 25 max max max Unit mA dB dB dB dBm Unit mA dB dB dB dBm Unit mA dB dB dB dBm
CMH192 - Datasheet (October 1st, 2002)
pg. 2/11
GaAs MMIC
MIXER - Electrical Characteristics of Mixer section
CMH192
Test conditions: Ta = 25C; VDD= 2.7V, PLO = -7 dBm,PRF=-22 dBm, fRF = 1960 MHz, fLO = fRF - f IF, fIF = 210MHz, LOW=GND, HIGH=Vdd Mode - High Linearity min typ max Operating Current Conversion Gain Noise Figure 3rd Order Input Intercept Point RF Input return loss LO Input return loss IF Output Impedance Operating Current Conversion Gain Noise Figure 3rd Order Input Intercept Point RF Input return loss LO Input return loss IF Output Impedance
(1) (1)
Unit mA dB dB dBm dB dB
15 15.0 3.5 5.5 10 10 350 - j*515 min typ 12 14.5 3.8 4 10 10 350 - j*515 max
Mode - Reduced Current
Unit mA dB dB dBm dB dB
1) IF Output externally tuned to desired impedance
FULL CHAIN - LNA/Downconverter Characteristics
Test conditions: Ta = 25C; VDD= 2.7V, PLO = -7 dBm, PRF=-22 dBm, fRF = 1960 MHz, fLO = fRF - f IF, fIF = 210MHz, LOW=GND, HIGH=Vdd Mode - High Gain, High Linearity Total operating Current Conversion Gain Noise Figure Input IP3
(1)
min
typ 22.0 24.5 1.7 -4.5
max
Unit mA dB dB dBm
LNA Input IP3 10.0 dBm 1) Assumes 3 dB loss for image filter, value is calculated based on gain measurement of LNA and downconverter
CMH192 - Datasheet (October 1st, 2002)
pg. 3/11
GaAs MMIC
FULL CHAIN - LNA/Downconverter Characteristics (continued)
CMH192
Test conditions: Ta = 25C; VDD= 2.7V, PLO = -7 dBm, PRF=-22 dBm, fRF = 1960 MHz, fLO = fRF - f IF, fIF = 210MHz, LOS=GND, HIGH=Vdd min typ max Mode - High Gain, Reduced Current Total operating Current Conversion Gain Noise Figure Input IP3 LNA Input IP3 Mode - Low Gain (LNA bypass) Total operating Current Conversion Gain Noise Figure
(1) (1)
Unit mA dB dB dBm dBm
17 23.5 1.8 -5.5 7.5 min Typ 12 7.2 11.5 max
Unit mA dB dB dBm
Input IP3 11.5 1) Assumes 3.0 dB loss for image filter, value is calculated based on gain measurement of LNA and downconverter
Truth Table
Control Voltage Operating Mode High Gain & Linearity High Gain, Low Current Low Gain Gain Ctl H H L Rcv Only H L L
CMH192 - Datasheet (October 1st, 2002)
pg. 4/11
GaAs MMIC
CMH192
PIN Assignments & Functional Block Diagram
MIXE IF
LN
RF LO
Pin Assignments:
PIN Symbol 1 LO in 2 GND 3 LOA Vdd 4 Mix Out Truth5Table: IF Mtch 6 IF In 7 GND 8 IFA src 9 IFA out 10 GND 11 RFA Vdd 12 RFA in 13 Rcv 14 Vdd 15 LNA out 16 LNA Vdd 17 GND 18 LNA in 19 GND 20 Gctl
Description LO Input Ground Supply voltage for LO Buffer Amp Mixer IF Output IF input match connection IF amplifier input Ground IF Amplifier FET source ground IF Amplifier output Ground Supply voltage for RFA Mixer input from image filter Current mode control Supply voltage RF output of LNA Supply voltage for LNA Ground RF Input to LNA Ground Gain mode control for LNA
CMH192 - Datasheet (October 1st, 2002)
pg. 5/11
GaAs MMIC
Applications Circuit:
CMH192
Component C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11
Description CAP, 1 pF CAP, 22 pF CAP, 10K pF CAP, 100 pF CAP, 22 pF CAP, 1000 pF CAP, 10K pF CAP, 3.3 pF CAP, 100 pF CAP, 2 pF CAP, 4 pF
Package Type 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402
Component C12 L1 L2 L3 L4 L5 L6 L7 L8 R1 R2
Description CAP, 100 pF IND, 5.6 nH IND, 120 nH IND, 100 nH IND, 82 nH IND, 2.7 nH IND, 5.6 nH IND, 5.6 nH IND, 12 nH RES, 100 KOHM RES,100 KOHM
Package Type 0402 0402 0603 0603 0603 0402 0402 0402 0402 0402 0402
CMH192 - Datasheet (October 1st, 2002)
pg. 6/11
GaAs MMIC
Package Outline - VQFN 20
CMH192
Recommended PCB Layout:
100pF 0402 SMT capacitor, 3 places (Murata GRP1555C7H100JZ01 or equivalent )
CMH192 - Datasheet (October 1st, 2002)
pg. 7/11
GaAs MMIC
Evaluation Board:
CMH192
CMH192 - Datasheet (October 1st, 2002)
pg. 8/11
GaAs MMIC
CMH192 - Application Information DC Biasing:
CMH192
Supply Voltage One regulated voltage source is needed for CMH192. On the evaluation board it is labeled VDD. Minimum LO Power for Proper Biasing For proper biasing of the CMH192, a minimum LO input power is required. If the part is turned ON without any LO drive applied all currents will be extremely high. The minimum LO required is approximately -9 dBm. Operation with LO input powers below the minimum value causes the current to increase in all amplifier stages. For higher LO input power levels the current stays relatively constant over a wide range of LO powers. Proper matching of the LO amplifier is also important to achieve the lowest current consumption and to minimize the required LO input power. Adjustable Current Level The CMH192 can operate in two different current/linearity modes: High Linearity (with higher current) and Reduced Current (lower linearity). To operate with reduced current the voltage on pin 13 (RCV) should be set LOW. Some additional current reduction can be achieved by reducing the voltage at pin 14 by placing a resistor between VDD and pin 14. The current pulled by pin 14 is approximately 1 mA. Higher currents can be realized by using a higher VDD voltage.
Tuning LO and IF Amplifiers:
The CMH192 can be tuned to utilize either high or low side LO frequencies and allows a wide range of IF frequencies. Depending on the chosen frequency plan the off chip components for the LO and IF amplifiers will need to be optimized. An application circuit with all component values is provided for low side LO injection with IF frequency of 210 MHz (RF freq 1930 - 1960 MHz) Two external components (L6 and L7) are required for tuning the LO. L6 is critical for setting the minimum current and to achieve the constant DC current over the operating band. L7 sets the LO input match. Components L4, C9 and C11 form the input match for the IF amplifiers and will vary depending on the chosen IF frequency. The inductor on pin 8 allows adjustment to the gain of the IF amplifier. Output matching components shown in the application circuit provide a transformation for a 50 Ohm load impedance. The output impedance for the IFA (looking into pin 9) at 210 MHz is approximately (350 - j*515) Ohms.
CMH192 - Datasheet (October 1st, 2002)
pg. 9/11
GaAs MMIC
Downconverter Gain Adjustment:
CMH192
The Downconverter gain can be adjusted by changing the source feedback inductor L3 for the IFA. Higher inductance will give lower downconverter gain and typically improve the IIP3.
Gain/Current Control Pins:
LOW = 0 to 0.2 V HIGH = Vdd to (Vdd - 0.2) V VGAIN - select between high and low gain states in the LNA. VGAIN = HIGH: LNA ON (~12 dB Gain, ~ 6.5 mA current) VGAIN = LOW: LNA bypassed (~ 4 dB Loss, no current) VRCV - selects Current/Linearity mode (changes current in LNA/RFA/IFA) VRCV = LOW selects Reduced Current Mode VRCV = HIGH selects High Linearity Mode.
Other Notes:
Inductor L1 is critical for setting the Noise Figure of the LNA. A high Q wire wound inductor (e.g. Coilcraft) is recommended to achieve minimum NF. Inductor L5 and Capacitor C10 form a "tank circuit" to terminate the RF in the mixer. These components should be placed in parallel close to pin 4. These elements may require tuning depending on component vendor and board parasitics to achieve flat conversion gain vs. frequency. Inductor L8 is necessary for proper operation of the circuit for ESD protection. Lower RF frequencies (i.e. Korean PCS or GPS) may be accommodated by adding inductance between the LNA and RFA VDD pins and their bypass capacitors. LNA current can be determined by subtracting the current in Low Gain mode from the current in High Gain mode (keeping VRCV and VMODE constant). Control lines (G_CNTL, VRCV and VMODE) have an input impedance of greater than 1 M when Vdd is ON. When VDD is off, they have approximately 20 K input impedance.
CMH192 - Datasheet (October 1st, 2002)
pg. 10/11
GaAs MMIC
CMH192
Published by TriQuint Semiconductor GmbH, Marketing, Konrad-Zuse-Platz 1, D-81829 Munich. Copyright TriQuint Semiconductor GmbH 2002. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of TriQuint Semiconductor in Germany or the TriQuint Semiconductor Companies and Representatives worldwide. Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest TriQuint Semiconductors Office. pg. 11/11

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